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HiPerFETTM Power MOSFETs
Q-Class
IXFK 30N100Q2 IXFX 30N100Q2
VDSS = 1000 V = 30 A ID25 RDS(on) = 0.40 trr 300 ns
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr
Preliminary Data Sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-264 PLUS-247 TO-264 Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 1000 1000 30 40 30 120 30 60 4.0 20 735 -55 ... +150 150 -55 ... +150 300 V V V V A A A mJ J V/ns W C C C C
G = Gate S = Source
PLUS 247TM (IXFX)
G
D (TAB) D
TO-264 AA (IXFK)
G
D
S
D (TAB) D = Drain TAB = Drain
0.9/6 Nm/lb.in. 6 10 g g
Features Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2.5 5.0 200 TJ = 25C TJ = 125C 50 2 0.40 V V nA A mA Advantages Easy to mount Space savings High power density Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V
VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2004 IXYS All rights reserved
DS99160(4/04)
IXFK 30N100Q2 IXFX 30N100Q2
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 30 8200 VGS = 0 V, VDS = 25 V, f = 1 MHz 760 140 22 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1.0 (External), 14 60 10 186 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 46 82 0.17 TO-264 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
PLUS 247TM Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 15 V; ID = 0.5 * ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 30 120 1.5 250 A A V ns C A
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
TO-264 AA Outline
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A, -di/dt = 100 A/s, VR = 100 V 1 10
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83
Min.
Inches Max.
.190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344
IXFK 30N100Q2 IXFX 30N100Q2
Fig. 1. Output Characteristics @ 25C
30 27 24 21 VGS = 10V 7V 6.5V 60 55 50 45 6V 40 35 30 25 20 15 5V 10 5 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 3 6 9 12 15 18 21 24 27 30 5V 5.5V 6V VGS = 10V 7V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
18 15 12 9 6 3 0
5.5V
I D - Amperes
6.5V
V D S - Volts Fig. 3. Output Characteristics @ 125C
30 27 24 VGS = 10V 7V 6V 3.1 2.8 VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
I D - Amperes
21 18 15 12 9 6 3 0 0 3 6 9 4.5V 12 15 18 21 24 27 5V 5.5V
R D S ( o n ) - Normalized
2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 -50 -25 0 I D = 15A I D = 30A
V D S - Volts
TJ - Degrees Centigrade
25
50
75
100
125
150
Fig. 5. RDS(on) Norm alized to
2.8 2.6
0.5 ID25 Value vs. ID
VGS = 10V
Fig. 6. Drain Current vs. Case Tem perature
33 30 27 24
R D S ( o n ) - Normalized
2.4 2.2
I D - Amperes
TJ = 25C 35 40 45 50 55 60
2 1.8 1.6 1.4 1.2 1 0.8 0 5 10
TJ = 125C
21 18 15 12 9 6 3 0
15 20
I D - Amperes
25
30
-50
-25
TC - Degrees Centigrade
0
25
50
75
100
125
150
(c) 2004 IXYS All rights reserved
IXFK 30N100Q2 IXFX 30N100Q2
Fig. 7. Input Adm ittance
40 35 30 25 20 15 10 5 0 3.5 4 4.5 5 5.5 6 6.5 60 55 50 45 40 35 30 25 20 15 10 5 0 0 5 10 15 20 25 30 35 40 45 50 TJ = -40C 25C 125C
Fig. 8. Transconductance
TJ = 125C 25C -40C
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
90 80 70 10 9 8 7 VDS = 500V I D = 15A I G = 10mA
g f s - Siemens
I D - Amperes
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
VG S - Volts
TJ = 25C
60 50 40 30 20 10 0 0.4 0.5 0.6 0.7 TJ = 125C
6 5 4 3 2 1 0
V S D - Volts
0.8
0.9
1
1.1
1.2
0
20
40
60
80
100 120 140 160 180 200
Q G - nanoCoulombs Fig. 12. Maxim um Transient Therm al Resistance
1.00
Fig. 11. Capacitance
10000 f = 1MHz C iss
Capacitance - picoFarads
R( t h ) J C - C / W
1000
C oss
0.10
C rss 100 0 5 10 15 20 25 30 35 40 0.01 1 10 100 1000
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117
Pulse Width - milliseconds
5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344

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